说明
PECVD RF Substrate: 13.56 MHz Pump Requirements: Blower Temperature Range (C): 200-350C Deposition Rate: >400 A/min Uniformity (Within Wafer): <+/-5% Uniformity (Wafer to Wafer): <+/-2.5%配置
无配置OEM 型号描述
Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor文件
无文件
UNAXIS
790
类别
PECVD
上次验证： 2 天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
138844
晶圆尺寸：
3"/75mm, 4"/100mm, 5"/125mm, 6"/150mm
年份：
2002
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
PECVD RF Substrate: 13.56 MHz Pump Requirements: Blower Temperature Range (C): 200-350C Deposition Rate: >400 A/min Uniformity (Within Wafer): <+/-5% Uniformity (Wafer to Wafer): <+/-2.5%配置
无配置OEM 型号描述
Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor文件
无文件