说明
无说明配置
790 RIE System - Max wafer size capable: 8"/200mm - RFPP RF5S 500W RF Generator - Leybold 361C Turbo Pump (Qty 1) - Leybold NT 150/360 Controller - MKS 1160B MFCs (gas configuration listed below) - Chiller - Edwards QDP40 Dry Pump (or equivalent) - Operator Manual and Documentation Gas Configuration consists of: - O2 200sccm - H2 100sccm - CH4 20sccm - CHF3 200sccm Single RIE Chamber Ideal for R&DOEM 型号描述
The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.文件
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PLASMA-THERM
790
已验证
类别
Plasma Etch
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
19003
晶圆尺寸：
8"/200mm
年份：
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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PLASMA-THERM
790
类别
Plasma Etch
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
19003
晶圆尺寸：
8"/200mm
年份：
未知
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
790 RIE System - Max wafer size capable: 8"/200mm - RFPP RF5S 500W RF Generator - Leybold 361C Turbo Pump (Qty 1) - Leybold NT 150/360 Controller - MKS 1160B MFCs (gas configuration listed below) - Chiller - Edwards QDP40 Dry Pump (or equivalent) - Operator Manual and Documentation Gas Configuration consists of: - O2 200sccm - H2 100sccm - CH4 20sccm - CHF3 200sccm Single RIE Chamber Ideal for R&DOEM 型号描述
The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.文件
无文件