说明
HG-CV System for EPI resistivity measurement配置
无配置OEM 型号描述
The SSM 495 is an automatic mapping system that provides a variety of electrical characterization measurements for non-patterned wafers used in epitaxial silicon and front-end semiconductor process development and production. It is capable of monitoring a wide range of parameters, including low-k dielectric materials, epi resistivity, defect density, ion implant dose, metallic contamination, oxide quality, interlayer dielectric quality, gate oxide integrity, high and low k dielectric development, and threshold voltage. The advanced mercury probe used in the SSM 495 provides a stable and reproducible electrical contact, eliminating the need for slow and expensive lithography and metallization steps. Additionally, the unique patented mercury probe allows the wafer to be placed face up, eliminating contamination and damage caused by traditional face-down mercury probe systems. This system is ideal for monitoring various aspects of semiconductor production and development.文件
无文件
SSM
495
已验证
类别
Probers
上次验证： 21 天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
115119
晶圆尺寸：
8"/200mm
年份：
2001
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SSM
495
类别
Probers
上次验证： 21 天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
115119
晶圆尺寸：
8"/200mm
年份：
2001
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
HG-CV System for EPI resistivity measurement配置
无配置OEM 型号描述
The SSM 495 is an automatic mapping system that provides a variety of electrical characterization measurements for non-patterned wafers used in epitaxial silicon and front-end semiconductor process development and production. It is capable of monitoring a wide range of parameters, including low-k dielectric materials, epi resistivity, defect density, ion implant dose, metallic contamination, oxide quality, interlayer dielectric quality, gate oxide integrity, high and low k dielectric development, and threshold voltage. The advanced mercury probe used in the SSM 495 provides a stable and reproducible electrical contact, eliminating the need for slow and expensive lithography and metallization steps. Additionally, the unique patented mercury probe allows the wafer to be placed face up, eliminating contamination and damage caused by traditional face-down mercury probe systems. This system is ideal for monitoring various aspects of semiconductor production and development.文件
无文件