Employing a unique, “selective” suppression mechanism, the Centura® iSprint™ ALD/CVD SSW process delivers the industry’s first bottom-up CVD W gap fill, free of voids and seams. It optimizes the volume of W, creating more robust features and helping to improve yield.

Applied Materials is committed to accelerating this new PPACt playbook for our customers and partners. We have the broadest and deepest portfolio of products for delivering PPACt innovations to the market. This portfolio encompasses the ability to create and deposit, shape and remove, modify, analyze, and connect materials and devices in new ways. We are unique in having a broad suite of process technology and metrology capabilities under one roof, and we have highly differentiated silicon and packaging lab capabilities. Our Integrated Materials Solutions co-optimize materials deposition, removal, modification, and analysis to create new materials and engineer new structures for high-performance, low-power chips at leading-edge nodes.

CENTURA AP ISPRINT

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