说明
无说明配置
RTPOEM 型号描述
The Millios is based on proprietary water-wall argon arc lamp technology. The system design monitors and controls wafer front-side and backside temperature in real time. The system has excellent wafer temperature control capabilities, including unique millisecond anneal pulse duration adjustment capability and integrated spike anneal-flash millisecond anneal process capability. It can meet technical requirements of millisecond anneal process and effectively manage wafer thermal stress to avoid wafer breakage issues at the same time. The Millios is the best technical solution for ultra-shallow-junction formation, high-k materials passivation and metal silicide formation processes in advanced transistor fabrication. It is also applicable for other materials surface anneal processes.文件
无文件
MATTSON
MILLIOS
已验证
类别
RTP/RTA
上次验证： 30 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
116708
晶圆尺寸：
12"/300mm
年份：
2011
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
MATTSON
MILLIOS
类别
RTP/RTA
上次验证： 30 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
116708
晶圆尺寸：
12"/300mm
年份：
2011
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
RTPOEM 型号描述
The Millios is based on proprietary water-wall argon arc lamp technology. The system design monitors and controls wafer front-side and backside temperature in real time. The system has excellent wafer temperature control capabilities, including unique millisecond anneal pulse duration adjustment capability and integrated spike anneal-flash millisecond anneal process capability. It can meet technical requirements of millisecond anneal process and effectively manage wafer thermal stress to avoid wafer breakage issues at the same time. The Millios is the best technical solution for ultra-shallow-junction formation, high-k materials passivation and metal silicide formation processes in advanced transistor fabrication. It is also applicable for other materials surface anneal processes.文件
无文件