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METRON / AG ASSOCIATES HEATPULSE  8800
    说明
    The AG Associates Heatpulse8800 rapid thermal anneal system contains a subsystem for each of the following: • Electronics (including a dedicated microprocessor) • Mass-flow-controlled gas handling • Cooling • ULPA filtration • Mechanical assemblies AG Associates Heatpulse 8800 Rapid Thermal Anneal equipment APPLICATIONS: The Heatpulse 8800 system is a versatile tool which can be useful for many applications, such as (but not limited to): • Silicon dielectric growth • Implant annealing • Glass re-flow • Silicide formation and annealing • Nitridation of metals • Contact alloying • Oxygen donor annihilation
    配置
    The following are the operating specifications for the Heatpulse® 8800 system. Wafer handling: automatic serial processing, using standard cassettes. Throughput: Process dependent, approximately 80 wafers per hour (in a null cycle) without flat-finder. Wafer sizes: 5 inches, 6 inches, and 8 inches (standard). Ramp-up rate: Programmable, 1 – 180°C per second. Steady-state duration: 1 – 600 seconds per step. Ramp-down rate: Programmable, 1 – 180°C per second. Ramp-down rate is temperature and radiation dependent, maximum 150°C per second. Recommended steady-state temperature range: 400 – 1200°C. ERP temperature accuracy: +3°C to -7°C, when calibrated against an instrumented thermocouple wafer (ITC). Temperature repeatability: + 3°C or better at 1150°C wafer to wafer. (Repetition specifications are based on a 100-wafer set.) Temperature uniformity: + 5°C across an 8-inch wafer at 1150°C. (This is a 1-sigma deviation from 100-angstrom oxide uniformity.) For a titanium silicidation process, no more than 1.5 percent increase to uniformity during the first anneal at 650 – 700°C.
    OEM 型号描述
    The Heatpulse 8800 system is a single-wafer, cassette-to-cassette rapid thermal processor, capable of processing in inert or corrosive ambient. The system is built for the production environment.Process Chamber accommodates 125mm to 200mm wafers, with standard slip-free ring and wafer aligner.
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    verified-listing-icon

    已验证

    类别
    RTP/RTA

    上次验证: 30 多天前

    物品主要详细信息

    状况:

    Refurbished


    运行状况:

    未知


    产品编号:

    138383


    晶圆尺寸:

    未知


    年份:

    未知


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    类似上架物品
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    METRON / AG ASSOCIATES HEATPULSE  8800

    METRON / AG ASSOCIATES

    HEATPULSE 8800

    RTP/RTA
    年份: 2000状况: 二手
    上次验证8 天前

    METRON / AG ASSOCIATES

    HEATPULSE 8800

    verified-listing-icon
    已验证
    类别
    RTP/RTA
    上次验证: 30 多天前
    listing-photo-fbd7c6cee97647bcbc934c3b8070a653-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/2186/fbd7c6cee97647bcbc934c3b8070a653/6ee9baa097c34fde85d71be31c8d40fb_agassociatesheatpulse8800645x1024_mw.jpg
    listing-photo-fbd7c6cee97647bcbc934c3b8070a653-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/2186/fbd7c6cee97647bcbc934c3b8070a653/fd2993a216ab42aa99802f6d030ec54c_agassociatesheatpulse88002760x1024_mw.jpg
    物品主要详细信息

    状况:

    Refurbished


    运行状况:

    未知


    产品编号:

    138383


    晶圆尺寸:

    未知


    年份:

    未知


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    说明
    The AG Associates Heatpulse8800 rapid thermal anneal system contains a subsystem for each of the following: • Electronics (including a dedicated microprocessor) • Mass-flow-controlled gas handling • Cooling • ULPA filtration • Mechanical assemblies AG Associates Heatpulse 8800 Rapid Thermal Anneal equipment APPLICATIONS: The Heatpulse 8800 system is a versatile tool which can be useful for many applications, such as (but not limited to): • Silicon dielectric growth • Implant annealing • Glass re-flow • Silicide formation and annealing • Nitridation of metals • Contact alloying • Oxygen donor annihilation
    配置
    The following are the operating specifications for the Heatpulse® 8800 system. Wafer handling: automatic serial processing, using standard cassettes. Throughput: Process dependent, approximately 80 wafers per hour (in a null cycle) without flat-finder. Wafer sizes: 5 inches, 6 inches, and 8 inches (standard). Ramp-up rate: Programmable, 1 – 180°C per second. Steady-state duration: 1 – 600 seconds per step. Ramp-down rate: Programmable, 1 – 180°C per second. Ramp-down rate is temperature and radiation dependent, maximum 150°C per second. Recommended steady-state temperature range: 400 – 1200°C. ERP temperature accuracy: +3°C to -7°C, when calibrated against an instrumented thermocouple wafer (ITC). Temperature repeatability: + 3°C or better at 1150°C wafer to wafer. (Repetition specifications are based on a 100-wafer set.) Temperature uniformity: + 5°C across an 8-inch wafer at 1150°C. (This is a 1-sigma deviation from 100-angstrom oxide uniformity.) For a titanium silicidation process, no more than 1.5 percent increase to uniformity during the first anneal at 650 – 700°C.
    OEM 型号描述
    The Heatpulse 8800 system is a single-wafer, cassette-to-cassette rapid thermal processor, capable of processing in inert or corrosive ambient. The system is built for the production environment.Process Chamber accommodates 125mm to 200mm wafers, with standard slip-free ring and wafer aligner.
    文件

    无文件

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