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ONTO / NANOMETRICS / ACCENT / BIO-RAD QS3300
  • ONTO / NANOMETRICS / ACCENT / BIO-RAD QS3300
  • ONTO / NANOMETRICS / ACCENT / BIO-RAD QS3300
  • ONTO / NANOMETRICS / ACCENT / BIO-RAD QS3300
说明
Thin Film Measurement
配置
无配置
OEM 型号描述
The QS2200 and QS3300 are Fourier-Transform Infra-Red spectrometers designed for non-destructive wafer analysis. These systems are used for the characterization and measurement of semiconductor substrates as well as in device manufacturing. The QS3300 is a production version which supports high-volume 300mm manufacturing for various applications: boron and phosphorus concentration in BPSG films, atomic hydrogen concentrations in silicon nitride passivation layers, fluorine in FSG films, epitaxial thickness, concentrations of interstitial oxygen and substitutional carbon in silicon.
文件

无文件

类别
Spectrometer / SIMS

上次验证: 60 多天前

物品主要详细信息

状况:

Used


运行状况:

未知


产品编号:

105917


晶圆尺寸:

未知


年份:

未知


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

ONTO / NANOMETRICS / ACCENT / BIO-RAD

QS3300

verified-listing-icon
已验证
类别
Spectrometer / SIMS
上次验证: 60 多天前
listing-photo-4123b023d79343fd8d34020bff6ef6b1-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
物品主要详细信息

状况:

Used


运行状况:

未知


产品编号:

105917


晶圆尺寸:

未知


年份:

未知


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
Thin Film Measurement
配置
无配置
OEM 型号描述
The QS2200 and QS3300 are Fourier-Transform Infra-Red spectrometers designed for non-destructive wafer analysis. These systems are used for the characterization and measurement of semiconductor substrates as well as in device manufacturing. The QS3300 is a production version which supports high-volume 300mm manufacturing for various applications: boron and phosphorus concentration in BPSG films, atomic hydrogen concentrations in silicon nitride passivation layers, fluorine in FSG films, epitaxial thickness, concentrations of interstitial oxygen and substitutional carbon in silicon.
文件

无文件