
说明
NIKON I-line lithography machine Nikon I-line lithography machine uses a light source with a wavelength of 365nm and is a key device for fine pattern transfer in semiconductor manufacturing. The main models include the NSR series (step-and-projection type) and the 3 series (scanning type). They support a variety of wafer sizes and are widely used in the production of 2-inch, 4-inch, 6-inch, 8-inch and 12-inch wafers. This allows them to serve semiconductor production lines of different sizes and meet diverse production needs.配置
0.35 LSA:55 0.63 5:1 22*22 FIA:65OEM 型号描述
The system offers a resolution of 0.35 microns utilizing a 365 nanometer wavelength I-line lens. It can process 87 or more 200mm wafers per hour with an alignment accuracy of 50nm or higher. The exposure area measures 22x22mm, and it has a reduction ratio of five to one.文件
无文件
类别
Steppers & Scanners
上次验证: 60 多天前
物品主要详细信息
状况:
Used
运行状况:
未知
产品编号:
131659
晶圆尺寸:
2"/50mm, 4"/100mm, 6"/150mm, 8"/200mm, 12"/300mm
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
NIKON
NSR-2205i14E
类别
Steppers & Scanners
上次验证: 60 多天前
物品主要详细信息
状况:
Used
运行状况:
未知
产品编号:
131659
晶圆尺寸:
2"/50mm, 4"/100mm, 6"/150mm, 8"/200mm, 12"/300mm
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
NIKON I-line lithography machine Nikon I-line lithography machine uses a light source with a wavelength of 365nm and is a key device for fine pattern transfer in semiconductor manufacturing. The main models include the NSR series (step-and-projection type) and the 3 series (scanning type). They support a variety of wafer sizes and are widely used in the production of 2-inch, 4-inch, 6-inch, 8-inch and 12-inch wafers. This allows them to serve semiconductor production lines of different sizes and meet diverse production needs.配置
0.35 LSA:55 0.63 5:1 22*22 FIA:65OEM 型号描述
The system offers a resolution of 0.35 microns utilizing a 365 nanometer wavelength I-line lens. It can process 87 or more 200mm wafers per hour with an alignment accuracy of 50nm or higher. The exposure area measures 22x22mm, and it has a reduction ratio of five to one.文件
无文件