说明
ALD (Atomic Layer Deposition)配置
无配置OEM 型号描述
NT333™ has large wafer capacity as compared to single or dual wafer processing techniques. With the added capability of pre or post treatment steps included in each ALD cycle, NT333™ is capable of forming films of the highest quality while operating at low temperatures and providing tunable film stresses for a variety of applications. Additionally, NT333™ has unique plasma shield which mitigates plasma damage resulting in high quality films while maintain high stage rotation speeds.文件
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TEL / TOKYO ELECTRON
NT333
已验证
类别
ALD
上次验证: 20 天前
物品主要详细信息
状况:
Used
运行状况:
未知
产品编号:
72626
晶圆尺寸:
12"/300mm
年份:
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
类似上架物品
查看全部TEL / TOKYO ELECTRON
NT333
类别
ALD
上次验证: 20 天前
物品主要详细信息
状况:
Used
运行状况:
未知
产品编号:
72626
晶圆尺寸:
12"/300mm
年份:
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
ALD (Atomic Layer Deposition)配置
无配置OEM 型号描述
NT333™ has large wafer capacity as compared to single or dual wafer processing techniques. With the added capability of pre or post treatment steps included in each ALD cycle, NT333™ is capable of forming films of the highest quality while operating at low temperatures and providing tunable film stresses for a variety of applications. Additionally, NT333™ has unique plasma shield which mitigates plasma damage resulting in high quality films while maintain high stage rotation speeds.文件
无文件