CANON acquired ANELVA and became CANON ANELVA Corporation which focuses on: Vacuum thin-film deposition and processing equipment, semiconductor device manufacturing equipment, storage device manufacturing equipment, equipment for electronic device manufacturing and for R&D, maintenance service, and vacuum components.


CANON / ANELVA

ILD 4100SR

ILD-4015

ILD 4100SDII

I-4500

C 7100GT

PDC-157E

SPC-530H	

PDC-157F

High power and dry!
Portable type with pump. For Clean environment.

M-222LD-D 

L-430S-FHL

COSMOS I-1201

C-7500L

ILC 1080

PRF-125c

ILC-1013

L-332S-FH

I-1060 SVII

FC7100

PDC-028

SPF-313H

L-430S-FH

C-7730FH

SPL-500

ILC 1051

COSMOS I-1281

ASH-210

SPF-312

ILC-1012

C-7960FL

Anelva: ILD-4100 three-chamber cluster tool. Helicon wave source licensed from Plasma and Materials Technology (MORI source), can be configured with Helicon, RIE, and microwave downstream asher chambers, metal etch, poly etch processes.

ILD-4100

System configuration: Tray cluster PVD equipment
Substrate size: φ2" substrate to φ8" substrate

EC8100

The Anelva ILC-1015 is a sputtering system manufactured by Canon/Anelva. It is used for semiconductor processing assembly

ILC-1015

System configuration: Load lock type tray transport method
Substrate size: φ200mm maximum
Cathode: φ4" cathode ×3 (Option: φ12.5" cathode ×1, φ4" cathode ×4)
Operation method: Fully automated (pumping, transport, deposition)

EB1100

C-7010

System configuration: Cluster type
Substrate size: φ300mm

EC8000

IC7500

High power!
High power type with increased power over the Model 212's roughing pump.

M-222LD

C3010

HC7100 is a sputtering equipment for GMR heads and TMR heads that utilizes the tunnel effect.
System configuration: Cluster type
Substrate size: φ150mm、φ200mm

HC7100

High sensitivity and high power!
Adopted a new platform (newly developed TMP / Valve block).

M-222LD-H

I 2300SRE

ILC 1000

SPF-430H

Electronic component production
System configuration: Horizontal inline type
Substrate size: Effective deposition area 300mm×450mm
Cathode: 5"×16" cathode×3 (single side)

EL3200

Compact and Dry!
Low compact and dry type with diaphragm pump.

M-212LD-D

I-4100MR

I-1060

High sensitivity and high power!
high sensitivity and high response type with FINE mode as the standard.

M-222LD-D-H

System configuration: Cluster type
Substrate: φ100mm, φ150mm
Main pump: Turbo Moleculer Pump (TMP)
Electric power: 3φ AC200V±10% 125A 50/60Hz
Cooling water: 30〜34L/min 0.2〜0.3MPa 15〜30℃
Compressed air: 0.5〜0.8MPa
Process Gas: 0.15〜0.4MPa
Throughput: 3.5min/set (It varies according to a process condition)
Weight: 3720kg (Main body)
Footprint: W3300mm×D5100mm (standard specification)

BC7000

C-7300EX

System configuration: Cluster-type (EC7000 sputtering chamber ×1, EC7001 sputtering chamber ×2) Tray transport method
Substrate size: φ200mm maximum
Cathode: φ4" cathode ×3 (Option: φ12.5" cathode ×1, φ4" cathode ×4)
Operation method: Fully automated (pumping, transport, deposition)

EC7000

M-212LD

System configuration: Cluster type (up to three annealing chambers) C to C type
Substrate size: φ3", φ4", φ6"

EC7200

MRAM volume manufacturing
System configuration: Cluster type
Substrate size: φ300mm

NC8000

M-232LD

Effectively consolidates magnetic head production processes.This is an integrated magnetic HEAD production equipment only possible with Canon ANELVA product lineup.

System configuration: Cluster type
Substrate size: φ150mm, φ200mm

HC7300

System configuration: Cluster type
Substrate: Φ300 mm

NC7900

ML3000

FC7102

IC7200

C-7010C

System configuration: Cluster type (up to three process chambers) C to C type
Substrate size: φ200mm maximum
Cathode: φ7.1" cathode (Up to 4. Varies depending on the module.)

Modules:
Offset rotary sputtering module (multi-cathode specification)
Offset rotary and revolutionary sputtering module
Etching module (preprocessing)
Preheating module (preprocessing)

EC7400

EL3000

EVC-1701

COSMOS 300 I-1201

I-1100 C 

The Anelva I-1060 SV is a sputtering system that can handle 8" wafers with a notch. It has a Chamber L1 with an Etch (TMP) structure, a 110 Holder Mg, and uses Ar gas. The power supply for this chamber is 60M + 400 KHz, 1kW (RF).

I-1060 SV

The Anelva ILC-1060 is a specific model of a magnetron sputtering system. It features  features a vacuum chamber that provides a controlled environment for thin film deposition. The ILC-1060 can accommodate a variety of target materials, such as metals, alloys, or compounds, depending on the specific application requirements

ILC-1060

The Anelva I-1060 SVII PLUS-1 is a sputter coating equipment that provides users with precise metal film deposition capabilities. This sputtering system is used to physically vaporize metal pellets, which can then be deposited onto a substrate through reactive ionization equipment

I-1060 SVII PLUS-1

C 7100

I-1230

EC3000

High sensitivity and high power!
Adopted a new platform (newly developed TMP / Valve block), high sensitivity and high response type with FINE mode as the standard. Even higher power type with 500L/min multi-stage roots pump.

M-222LD-D-H_500

IC7400

System configuration: Tray transport method (Load lock is option)
Substrate size: φ150mm maximum (Have it of load lock;greatest φ100mm)
Cathode: φ2" cathode ×3
Operation method: Auto pumping operation, manual transport/deposit operation
Footprint: W1800mm×D1100mm×H1550mm (standard specification)

EB1000

System configuration: Vertical Inline configuration

Applicable process module for one side will be as follows
• Anneal module
• Sputtering module

Substrate:
□650mm
□300mm
φ300mm

EL3400

I-4100 SVII

Upgrade from HC7100 (PVD equipment for head) enabling mass-production of φ300 mm wafers based on experience with the φ300 mm wafer production line.

CANON / ANELVA

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I-4500

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