In 2000, Eaton spun off Axcelis as a separate company, and Axcelis inherited Eaton’s 50-percent ownership stake in the joint venture. SEN, licenses technology from Axcelis for ion implantation, has exclusive rights to the territory of Japan and is the leading producer of ion implantation equipment in Japan. In 2009, the merger between Axcelis Technologies and Sumitomo Heavy Industries dissolved—Sumitomo became the sole parent company, and with this, the company name changed to SEN Corporation. 

SEN CORPORATION / SUMITOMO

SHX-II

The SEN CORPORATION / SUMITOMO NV-GSD HE3 is an ion implanter that uses high-energy and was developed by SEN Corporation. It is an improved version of the NV-GSD-HE3, with the addition of six RF resonators to the beam line. The system is configured for 300mm wafers and can accelerate boron ions up to 2 MeV with a beam current of 0.75 mA, as well as phosphorus ions up to 4.4 MeV with a beam current of 0.35 mA. Its primary use is in the image sensor market, where it increases the depth of CCD photodiodes in the wafer surface, allowing for higher pixel density in image sensors. The system also features a state-of-the-art beam profile controller for optimizing implant damage and micro-uniformity. 

NV GSD HE3

The NV-GSD III-90 high-current ion implanter serving as the global standard, which achieved high throughput and a compact size with the adoption of a newly developed beam line.

NV GSD III 90

NV 6200A

The Eaton Nova NV-10-160 is a high energy Ion Implanter. Bare silicon wafers were implanted in an Eaton Nova 10-160 ion implanter at 60 keV energy with doses in the range 1-5∙1015cm-2 and annealed at 600°C for 20 min. 

NV 10 160

EATON NOVA / AXCELIS NV 10-80 is a high Ion Implanters system. NV 10-80 can be used with 6” wafer size.

NV 10 80

200mm high tilt and medium current applications for all chips.

NV 8250HT

NV 6200AV

The SEN CORPORATION / SUMITOMO NV-GSD III-180 is a high-current ion implanter that supports 5, 6, and 8-inch wafers. It has a wide range of implantation energy, from 2 to 180 keV, and is equipped with a post-deflection acceleration mechanism. It has a reliable batch transfer system, high throughput, and accurate high-dose control. The beam quality is high with low metal contamination and cross-contamination. It is also highly reliable and maintainable.- High-Current Ion Implanter
- Supports for 5, 6, and 8-inch wafers
- Supports for a wide range of implantation energy, from 2 to 180 keV (equipped with a post-deflection acceleration mechanism)
- Reliable batch transfer system
- Highly effective throughput
- Reliable high-dose control accuracy
- High beam quality with low metal contamination and low cross-contamination
- High reliability, high maintainability

NV GSD III 180

GSD ULTRA

ORion II NV-7392 ion implanter for flat panels.

ORion II NV 7392

EATON NOVA / AXCELIS NV GSD 200 E is a Implanters system. The NV GSD 200 E can produce wafer size of 8”.

NV GSD 200E

ORion II NV-6275 ion implanter for flat panels.

ORion II NV 6275

1-keV class, low-energy high-current ion implanter.

NV GSD LE

NV 1 40

EATON NOVA / AXCELIS 6200 is the Implanters system. The 6200 can produce a wafer size of 4”.

NV 6200

NV 1000

NVGSD-80 high-current ion implanter is equipped with a loadlock high-throughput end station (Gyro Super Disk or GSD).

NV GSD 80

NV 20A

NV 8200

GSD HEmc

LEX3 is a 300-mm extremely low-energy ion, high-current implanter.

LEX3

NV GSD 300E

With better energy and beam current than S-UHE.

SS-UHE

EATON NOVA / AXCELIS GSD 200 E2 is high current ion implanter that is configured for 200mm nodes with 13 batch wafers. It has 4 Cassette table (280 mm),2 Load buffer and 1 Dummy buffer. The input Power is 208 V, 60 Hz, 3 Phase, 95 A, 35 KVA and Output power is 90 KeV, 20 mA. Its vaccum system specifications are: A2203C, SEIKO SEIKI P1 Source turbo; STP-A2203C, SEIKO SEIKI P1 Controller; CTI OB-8 P2/Beamguide Cyro pump. Its other configurations include: 2 Ground bars; CTI_CRYOGENICS, 9650 compressor.

NV GSD 200E2

ORion NV-6072, for low-temperature polysilicon TFT-LCD.

ORion NV 6072

NV GSD

The SEN CORPORATION / SUMITOMO NV-8200P is a new medium-current implant system from Eaton-SEN. It addresses the need for ultrashallow implants for device manufacturers working with 0.5-micron geometries and below. The system uses a source common with previous generations of Eaton implanters, but has a new design that focuses on reducing contamination.

NV 8200P

GSD 200

HC3 ULTRA

Single-wafer ultra-high energy implanter.

S-UHE

GSD VHE

200-eV class, extremely low-energy high-current ion implanter.

The NV-GSD-A high-current ion implanter with increased beam current and improved throughput with 200-mm wafers.

NV GSD A

 NV-GSD III-90E low-energy, beam current enhanced, high-current ion implanter.

NV GSD III 90E

GSD 160

LEX3-II high-current ion implanter supporting 300-mm wafers with increased beam current at an extremely low energy.

LEX3-II

The SAion is an ion implanter for 300-mm wafers with all the refined optical, transfer, and control systems.
- Support for 200-mm wafers as well as 300-mm wafers, which is expandable to 450-mm wafers.

SAion

NV-10 high-current ion implanter supporting 150-mm wafers.

NV 10

medium-current ion implanters with world-class implanter quality.
Support for 200-mm and 300-mm wafers

MC3-II/GP

SEN CORPORATION / SUMITOMO NV-MC3 is a high-performance medium current ion implantation system that is suitable for 300 mm to 150 mm wafers. It is designed to achieve the highest implantation quality in the world, with an implantation energy range of 5 keV to 750 keV. The system minimizes metal and energy contamination, and reduces implantation angle deviation and beam shape change through the use of a left-right symmetric beam line. It also improves uniformity by reducing beam divergence and fixing the implant position with a unique scanning method. The NV-MC3 supports heavy ion implantation as standard, and is highly reliable and maintainable.

NV MC3

GSD III LED

The SEN Corporation / Sumitomo NV-GSD-HC3 is a high current ion implantation system designed for the efficient and high-volume production of devices such as DRAMs using 300 mm wafers. This model excels in ultra-low energy applications, offering implantation energy as low as 0.2 keV up to 80 keV. It ensures high current with minimal energy contamination through a deceleration mechanism, making it suitable for delicate processes down to 0.2 keV. The system features a high-performance, long-life ion source (ELS) for consistent performance. It provides high accuracy of implantation with excellent beam quality, minimizing metal contamination and cross-contamination using advanced technologies like the VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday). Additionally, a plasma shower system minimizes charge buildup, enhancing process stability. 

NV GSD HC3

GSD 100

NV-10SD high-current ion implanter is equipped with a single large wafer-disk end station (Super Disk or SD).

NV 10SD

The SEN Corporation / Sumitomo NV-GSDIII-LE is a best-selling high-current ion implantation system known for its high productivity in the low energy region. It supports implantation energy between 1 keV (0.2 keV with an optional deceleration mechanism) and 80 keV. The system ensures high beam current with minimal energy contamination, especially in the low energy range down to 1 keV (0.2 keV with the optional deceleration mechanism). It is equipped with a high-performance, long-life ion source (ELS) and delivers accurate implantation results. The NV-GSDIII-LE boasts high beam quality with low metal contamination and cross-contamination thanks to the adoption of advanced options like the VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday). It incorporates a plasma shower system to minimize charge buildup and enhance process stability. 

NV GSD III LE

NV GSD A 80

The SEN Corporation / Sumitomo NV-GSD-HE is a globally recognized high-energy ion implantation system designed for 200mm, 150mm, and 125mm wafers, offering exceptional productivity in the energy range of up to 3 MeV. It supports an energy range between 10 keV and 3,000 keV, providing increased acquisition energy and improved efficiency through RF acceleration using RF resonators. The system features enhanced beam current at high energy levels due to optimized mass analyzing magnet and FEM (Final Energy Magnet). For higher implantation efficiency, it offers the option of installing a CVA (Continuous Variable Aperture). The NV-GSD-HE ensures high accuracy of implantation and maintains high beam quality by minimizing metal contamination and cross-contamination. The optional VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday) further reduce cross-contamination. 

SEN CORPORATION / SUMITOMO

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