说明
无说明配置
Process Capabilities : Plasma Etch Chamber 1 Description : dual zone ESC Controller Type : VME Temperature Control : Single Pyrometer External Cooling : Water Cooled Accessories Rocker Valve for Installation on V2 Mainframe 16 Slot Gasbox Power Requirements : 100-240 V 41.0 A 50/60 Hz Cooling Water Required : Minimum Temperature: 10 ºC (50 ºF, 283.00 ºK) Maximum Temperature: 50 ºC (122 ºF, 323 ºK)OEM 型号描述
The 2300 Versys Kiyo is a manufacturing tool designed for 65 nm and beyond. It provides excellent uniformity and defect control on a reliable wafer transport system. The symmetric chamber and radial tuning features produce uniform etch results for advanced devices. It employs proprietary technology for process repeatability, low defect, and metal contamination results. It supports conventional applications such as gate and shallow trench isolation (STI) and emerging applications such as high k dielectric removal, critical spacer etch, and lithography-enabling etch steps. The system can be upgraded from the 2300 Versys Star, providing an investment-extending strategy.文件
无文件
类别
Dry / Plasma Etch
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
125819
晶圆尺寸：
8"/200mm
年份：
2008
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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LAM RESEARCH CORPORATION
2300 VERSYS KIYO
类别
Dry / Plasma Etch
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
125819
晶圆尺寸：
8"/200mm
年份：
2008
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
Process Capabilities : Plasma Etch Chamber 1 Description : dual zone ESC Controller Type : VME Temperature Control : Single Pyrometer External Cooling : Water Cooled Accessories Rocker Valve for Installation on V2 Mainframe 16 Slot Gasbox Power Requirements : 100-240 V 41.0 A 50/60 Hz Cooling Water Required : Minimum Temperature: 10 ºC (50 ºF, 283.00 ºK) Maximum Temperature: 50 ºC (122 ºF, 323 ºK)OEM 型号描述
The 2300 Versys Kiyo is a manufacturing tool designed for 65 nm and beyond. It provides excellent uniformity and defect control on a reliable wafer transport system. The symmetric chamber and radial tuning features produce uniform etch results for advanced devices. It employs proprietary technology for process repeatability, low defect, and metal contamination results. It supports conventional applications such as gate and shallow trench isolation (STI) and emerging applications such as high k dielectric removal, critical spacer etch, and lithography-enabling etch steps. The system can be upgraded from the 2300 Versys Star, providing an investment-extending strategy.文件
无文件