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LAM RESEARCH CORPORATION TCP 9600
    说明
    ETCH
    配置
    无配置
    OEM 型号描述
    TCP 9600 is a high-density, low-pressure system from Lam’s TCP product line. It was introduced in late 1992 and incorporates the Company’s patented Transformer Coupled Plasma-TM- source technology for etching 0.35 micron and smaller geometries. The TCP 9600 series is designed for metal etch applications and is used to produce a broad range of advanced logic and memory devices. The system operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates, with independent power control to the lower electrode. This improves etch results across a wider process window and offers customers a reliable, lower cost of ownership solution to their advanced needs.
    文件

    无文件

    类别
    Dry / Plasma Etch

    上次验证: 60 多天前

    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    123660


    晶圆尺寸:

    未知


    年份:

    未知


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available

    LAM RESEARCH CORPORATION

    TCP 9600

    verified-listing-icon
    已验证
    类别
    Dry / Plasma Etch
    上次验证: 60 多天前
    listing-photo-b28722dde8fe4d4187bda362245a037e-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    123660


    晶圆尺寸:

    未知


    年份:

    未知


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    说明
    ETCH
    配置
    无配置
    OEM 型号描述
    TCP 9600 is a high-density, low-pressure system from Lam’s TCP product line. It was introduced in late 1992 and incorporates the Company’s patented Transformer Coupled Plasma-TM- source technology for etching 0.35 micron and smaller geometries. The TCP 9600 series is designed for metal etch applications and is used to produce a broad range of advanced logic and memory devices. The system operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates, with independent power control to the lower electrode. This improves etch results across a wider process window and offers customers a reliable, lower cost of ownership solution to their advanced needs.
    文件

    无文件