说明
无说明配置
-Materials Etched: Si, SOI wafers -Masks: SiO2, SiN -Gases: SF6, C4F8, Ar, O2, Co2 -Photoresists: SC1800 series& SPR220 (Shipley), AZ4000 series (Clariant), NPR (Futurex) -Temp range: -20C to 100C Windows 2000 PC Note: pumps not includedOEM 型号描述
With market leading etch rates using a conventional de-coupled plasma source, the HRM provides a cost effective Deep Reactive lon Etch (DRIE) processing chamber. Designed to offer high etch rates while controlling ion damage, the HRM is ideal for deep anisotropic silicon etching using STS' ASE® process technology.文件
无文件
STS
HRM
已验证
类别
Dry / Plasma Etch
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
110058
晶圆尺寸：
6"/150mm
年份：
2003
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
STS
HRM
类别
Dry / Plasma Etch
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
110058
晶圆尺寸：
6"/150mm
年份：
2003
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
-Materials Etched: Si, SOI wafers -Masks: SiO2, SiN -Gases: SF6, C4F8, Ar, O2, Co2 -Photoresists: SC1800 series& SPR220 (Shipley), AZ4000 series (Clariant), NPR (Futurex) -Temp range: -20C to 100C Windows 2000 PC Note: pumps not includedOEM 型号描述
With market leading etch rates using a conventional de-coupled plasma source, the HRM provides a cost effective Deep Reactive lon Etch (DRIE) processing chamber. Designed to offer high etch rates while controlling ion damage, the HRM is ideal for deep anisotropic silicon etching using STS' ASE® process technology.文件
无文件