说明
high density, high anisotropy, ICP batch etch for GaN; could be used forSiC or metal etch; could also add a PECVD or ICP chamber to avoid cross contaminationchamber as well; fully automated. Wafers are automatically transfered to a wafer carrier which is mechanically clamped to the capacitively coupled cathode which provides biasing for good anisotropy and backside He cooling. Magnets are used to help focus the plasma for uniformity配置
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ULVAC
NE-950EX
类别
Dry / Plasma Etch
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
128838
晶圆尺寸：
6"/150mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
high density, high anisotropy, ICP batch etch for GaN; could be used forSiC or metal etch; could also add a PECVD or ICP chamber to avoid cross contaminationchamber as well; fully automated. Wafers are automatically transfered to a wafer carrier which is mechanically clamped to the capacitively coupled cathode which provides biasing for good anisotropy and backside He cooling. Magnets are used to help focus the plasma for uniformity配置
无配置OEM 型号描述
未提供文件
无文件