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ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
  • ASM EPSILON E2000
说明
ASM Epsilon 2000 EPI Complete with HDD and Software included.
配置
Upgraded from E2 to E2000. Has TCS with ASM LVC, integrated LPE bubbler Atmospheric system, N-type / P-type doping.
OEM 型号描述
The ASM Epsilon E2000 is a single-wafer epitaxy tool designed to accommodate various epitaxy applications. It covers a wide range of processes, including high-temperature silicon for wafer preparation and low-temperature selective or non-selective Silicon Germanium (SiGe) for creating transistor strain layers. The system is optimized for processing 150mm and 200mm wafers, offering flexibility and precision in epitaxial growth processes.
文件

无文件

PREFERRED
 
SELLER
类别
Epitaxial deposition (EPI)

上次验证: 60 多天前

Buyer pays 12% premium of final sale price
物品主要详细信息

状况:

Refurbished


运行状况:

未知


产品编号:

112717


晶圆尺寸:

6"/150mm


年份:

未知


Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
PREFERRED
 
SELLER

ASM

EPSILON E2000

verified-listing-icon
已验证
类别
Epitaxial deposition (EPI)
上次验证: 60 多天前
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Buyer pays 12% premium of final sale price
物品主要详细信息

状况:

Refurbished


运行状况:

未知


产品编号:

112717


晶圆尺寸:

6"/150mm


年份:

未知


Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
ASM Epsilon 2000 EPI Complete with HDD and Software included.
配置
Upgraded from E2 to E2000. Has TCS with ASM LVC, integrated LPE bubbler Atmospheric system, N-type / P-type doping.
OEM 型号描述
The ASM Epsilon E2000 is a single-wafer epitaxy tool designed to accommodate various epitaxy applications. It covers a wide range of processes, including high-temperature silicon for wafer preparation and low-temperature selective or non-selective Silicon Germanium (SiGe) for creating transistor strain layers. The system is optimized for processing 150mm and 200mm wafers, offering flexibility and precision in epitaxial growth processes.
文件

无文件