The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.

Applied Materials is committed to accelerating this new PPACt playbook for our customers and partners. We have the broadest and deepest portfolio of products for delivering PPACt innovations to the market. This portfolio encompasses the ability to create and deposit, shape and remove, modify, analyze, and connect materials and devices in new ways. We are unique in having a broad suite of process technology and metrology capabilities under one roof, and we have highly differentiated silicon and packaging lab capabilities. Our Integrated Materials Solutions co-optimize materials deposition, removal, modification, and analysis to create new materials and engineer new structures for high-performance, low-power chips at leading-edge nodes.

xR80 LEAP II

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