说明
无说明配置
无配置OEM 型号描述
The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.文件
无文件
类别
High Current
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
106504
晶圆尺寸：
8"/200mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT)
xR80 LEAP II
类别
High Current
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
106504
晶圆尺寸：
8"/200mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
无配置OEM 型号描述
The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.文件
无文件