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APPLIED MATERIALS (AMAT) xR80 LEAP II
    说明
    无说明
    配置
    无配置
    OEM 型号描述
    The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.
    文件

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    类别
    High Current

    上次验证: 60 多天前

    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    106504


    晶圆尺寸:

    8"/200mm


    年份:

    未知


    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    verified-listing-icon
    已验证
    类别
    High Current
    上次验证: 60 多天前
    listing-photo-aac167a9b89143668efd049874d7fc93-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    106504


    晶圆尺寸:

    8"/200mm


    年份:

    未知


    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    说明
    无说明
    配置
    无配置
    OEM 型号描述
    The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.
    文件

    无文件