说明
无说明配置
无配置OEM 型号描述
The VIISion 200 is a high current ion implantation system that autotunes and implants high doses with high beam currents for improved throughput. The design of the ion optics allows low energy implants in drift mode. When implanting with high currents, a plasma flood gun system is used to prevent wafer charging problems. The beam line design incorporates a number of significant features to enhance the generation and transport of ion beams with high efficiencies and minimal heavy metals and particle production. These include a dual filament ion source, a constant current extraction system with variable z axis and suppression voltage, a very high resolving power high acceptance mass analysis system, a rotating mass defining slit, a variable gap acceleration system and a full faraday in front of the wafer.文件
无文件
类别
High Current
上次验证： 30 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
136424
晶圆尺寸：
未知
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT) / VARIAN
VIISion 200
类别
High Current
上次验证： 30 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
136424
晶圆尺寸：
未知
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
无配置OEM 型号描述
The VIISion 200 is a high current ion implantation system that autotunes and implants high doses with high beam currents for improved throughput. The design of the ion optics allows low energy implants in drift mode. When implanting with high currents, a plasma flood gun system is used to prevent wafer charging problems. The beam line design incorporates a number of significant features to enhance the generation and transport of ion beams with high efficiencies and minimal heavy metals and particle production. These include a dual filament ion source, a constant current extraction system with variable z axis and suppression voltage, a very high resolving power high acceptance mass analysis system, a rotating mass defining slit, a variable gap acceleration system and a full faraday in front of the wafer.文件
无文件