说明
无说明配置
无配置OEM 型号描述
The GSD/HE is a high-energy implant device that is designed to maximize productivity and flexibility in a wide range of implant applications, including 200mm high energy implantation for logic and memory chips. With an energy range from 10keV to over 3MeV, it can perform all retrograde wells and channel implants in a chain. The device features exceptional beam purity, thanks to its patented linear acceleration technology, and is built on a production-proven GSD wafer-handling architecture. It is also easy to access and maintain, which helps to increase productivity and reduce the cost of ownership. Additionally, the GSD/HE can be used as a backup for medium current implantation, further increasing ROI.文件
无文件
AXCELIS
GSD HE
已验证
类别
Ion Implantation
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
74519
晶圆尺寸：
未知
年份：
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AXCELIS
GSD HE
类别
Ion Implantation
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
74519
晶圆尺寸：
未知
年份：
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
无配置OEM 型号描述
The GSD/HE is a high-energy implant device that is designed to maximize productivity and flexibility in a wide range of implant applications, including 200mm high energy implantation for logic and memory chips. With an energy range from 10keV to over 3MeV, it can perform all retrograde wells and channel implants in a chain. The device features exceptional beam purity, thanks to its patented linear acceleration technology, and is built on a production-proven GSD wafer-handling architecture. It is also easy to access and maintain, which helps to increase productivity and reduce the cost of ownership. Additionally, the GSD/HE can be used as a backup for medium current implantation, further increasing ROI.文件
无文件