说明
process 1ch配置
ID_HiEnrgOEM 型号描述
High energy implanter. processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability. A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.文件
无文件
类别
Ion Implantation
上次验证： 12 天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
144810
晶圆尺寸：
12"/300mm
年份：
2024
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AXCELIS
NV GSD HE3
类别
Ion Implantation
上次验证： 12 天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
144810
晶圆尺寸：
12"/300mm
年份：
2024
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
process 1ch配置
ID_HiEnrgOEM 型号描述
High energy implanter. processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability. A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.文件
无文件