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LAM RESEARCH / NOVELLUS CONCEPT ONE "C1"
    说明
    PECVD
    配置
    无配置
    OEM 型号描述
    The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.
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    verified-listing-icon

    已验证

    类别
    PECVD

    上次验证: 4 天前

    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    149887


    晶圆尺寸:

    6"/150mm


    年份:

    未知


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    类似上架物品
    查看全部
    LAM RESEARCH / NOVELLUS CONCEPT ONE "C1"

    LAM RESEARCH / NOVELLUS

    CONCEPT ONE "C1"

    PECVD
    年份: 0状况: 二手
    上次验证4 天前

    LAM RESEARCH / NOVELLUS

    CONCEPT ONE "C1"

    verified-listing-icon
    已验证
    类别
    PECVD
    上次验证: 4 天前
    listing-photo-eb59320fe22844cc9347221df2be3a35-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/92712/eb59320fe22844cc9347221df2be3a35/532bc0c753da4e649f4319b0cf04ceaa_85ad71dbd54b422589ae0983f87c02c11201a_f.jpeg
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    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    149887


    晶圆尺寸:

    6"/150mm


    年份:

    未知


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    说明
    PECVD
    配置
    无配置
    OEM 型号描述
    The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.
    文件

    无文件

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    查看全部
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