说明
Oxford PlasmaLab System 133+ RIE Reactive Ion Etcher RIE Reactive Ion Etcher Supports wafer sizes up to 300mm (330mm Platen) RIE set up for GaN Etch RF Power: 600W, 13.56MHz Water cooled electrode 10C-80C Load Lock with turbo pump End point detection: Verity Optical emission spectroscopy (200-800nm) Gas pod with 6 lines including following MFCs: Ar – 100sccm CL – 100sccm BCL3 – 100sccm N2O – 100sccm Windows PC, User friendly interface Chiller, Pump are not included.配置
无配置OEM 型号描述
The Oxford Plasmalab 133 is a system used for plasma etching through a process called Reactive Ion Etching (RIE). This refurbished system is designed for GaN etching and has a platen that measures 330mm. It has an RF power of 600W at a frequency of 13.56MHz and features a water-cooled electrode that can operate within a temperature range of 10°C to 80°C. The system also includes a load lock with a turbo pump and an end-point detection system that utilizes Verity Optical emission spectroscopy within the range of 200-800nm. The gas pod of the system has six lines, including mass flow controllers for gases such as Ar, CL, BCL3, and N2O.文件
无文件
类别
PECVD
上次验证： 7 天前
物品主要详细信息
状况：
Refurbished
运行状况:
未知
产品编号：
138677
晶圆尺寸：
未知
年份：
2003
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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OXFORD
PLASMALAB 133
类别
PECVD
上次验证： 7 天前
物品主要详细信息
状况：
Refurbished
运行状况:
未知
产品编号：
138677
晶圆尺寸：
未知
年份：
2003
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
Oxford PlasmaLab System 133+ RIE Reactive Ion Etcher RIE Reactive Ion Etcher Supports wafer sizes up to 300mm (330mm Platen) RIE set up for GaN Etch RF Power: 600W, 13.56MHz Water cooled electrode 10C-80C Load Lock with turbo pump End point detection: Verity Optical emission spectroscopy (200-800nm) Gas pod with 6 lines including following MFCs: Ar – 100sccm CL – 100sccm BCL3 – 100sccm N2O – 100sccm Windows PC, User friendly interface Chiller, Pump are not included.配置
无配置OEM 型号描述
The Oxford Plasmalab 133 is a system used for plasma etching through a process called Reactive Ion Etching (RIE). This refurbished system is designed for GaN etching and has a platen that measures 330mm. It has an RF power of 600W at a frequency of 13.56MHz and features a water-cooled electrode that can operate within a temperature range of 10°C to 80°C. The system also includes a load lock with a turbo pump and an end-point detection system that utilizes Verity Optical emission spectroscopy within the range of 200-800nm. The gas pod of the system has six lines, including mass flow controllers for gases such as Ar, CL, BCL3, and N2O.文件
无文件