说明

Consists of all of the components in the attached sheet L：47cm W：55cm H：108cm

配置

D-Rack

OEM 型号描述

The FPA-3000EX4 is a Fine Pattern Aligner that uses a 1KHz KrF laser to create quarter micron images on silicon wafers. It has an illumination intensity of 2800 W/m2 and can process 73 wafers per hour. It features a new color touch-panel display, All-Axis Air Bearing FLAT Stage performance, and CQUEST II off-axis illumination capabilities. The EX4 is equipped with a Cymer 1 KHz KrF laser and can expose subquarter micron images while maintaining 35 nm stage stepping accuracy. It also has a variable numerical aperture (NA) and Canon’s ULTIMA lens manufacturing technique to limit distortions. The FPA-3000EX4 offers lithography solutions such as improved resist profiles and depth-of-focus, fast and accurate air bearing FLAT stage performance, low distortion and tight overlay alignment, repeatable alignment accuracy for Chemical Mechanical Polish (CMP) Wafers, and improved chip yields and focus reliability with its edge-shot optimized tilt focusing system (CCD-OPTF II). Its specifications include a 5:1 reduction magnification, variable NA of 0.4 ~ 0.6, resolution of < 0.25 µm, image field size of 22mm ~ 17 X 26 mm, light source wavelength of 248 nm with pulse frequency of 1 kHz and power of 10 W, reticle size of 6", wafer size of max Ø8", off-axis broad-band auto alignment, stage repeatability of < 35 nm, and dimensions of W1900 X D2600 X H2450 mm for the stepper main body.