说明
Development_CVD_TiTIN Minimum 200 mm Maximum 200 mm Exterior Dimensions Width 79.921 in (203.0 cm) Depth 98.425 in (250.0 cm) Height 94.488 in (240.0 cm) Weight 4,010 lb (1,819 kg)配置
CVD - TITIN 8''OEM 型号描述
The Centura TxZ is a chemical vapor deposition (CVD) system that is used for depositing thin films of various materials on semiconductor wafers. It can be used with 8” wafer size and CVD system size is also 8”. In September 1996, the Liner TxZ Centura system was launched. This system combines a new CVD TiN chamber with a Coherent PVD Ti chamber, and allows for deposition of sequential layers of Ti and CVD TiN in high-aspect-ratio metal structures under vacuum. In September 1996, the Liner TxZ Centura system was launched. This system combines a new CVD TiN chamber with a Coherent PVD Ti chamber, and allows for deposition of sequential layers of Ti and CVD TiN in high-aspect-ratio metal structures under vacuum.文件
无文件
类别
CVD
上次验证： 4 天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
147414
晶圆尺寸：
8"/200mm
年份：
2000
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT)
CENTURA TxZ
类别
CVD
上次验证： 4 天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
147414
晶圆尺寸：
8"/200mm
年份：
2000
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
Development_CVD_TiTIN Minimum 200 mm Maximum 200 mm Exterior Dimensions Width 79.921 in (203.0 cm) Depth 98.425 in (250.0 cm) Height 94.488 in (240.0 cm) Weight 4,010 lb (1,819 kg)配置
CVD - TITIN 8''OEM 型号描述
The Centura TxZ is a chemical vapor deposition (CVD) system that is used for depositing thin films of various materials on semiconductor wafers. It can be used with 8” wafer size and CVD system size is also 8”. In September 1996, the Liner TxZ Centura system was launched. This system combines a new CVD TiN chamber with a Coherent PVD Ti chamber, and allows for deposition of sequential layers of Ti and CVD TiN in high-aspect-ratio metal structures under vacuum. In September 1996, the Liner TxZ Centura system was launched. This system combines a new CVD TiN chamber with a Coherent PVD Ti chamber, and allows for deposition of sequential layers of Ti and CVD TiN in high-aspect-ratio metal structures under vacuum.文件
无文件