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说明
Included Components: -EFEM with Three Load Ports -Main Body Part No: TRT-TMZZ -Chamber Part No: TEX-061 (Qty. 4) -Transformer Box: 3M80-001940-13 (Qty. 2) -Power Distribution Part No: MB-G2AAAA配置
TEL Tokyo Electron Triase+ 300mm CVD ASFD TiN Process System Load Ports: 3 Process: ASFD TiN Software: V5.650R1OEM 型号描述
The Triase+™ EX-II™ TiN (Titanium Nitride) is an advanced 300mm single wafer deposition system for high speed ASFD which enables high-quality thin film formation with excellent within-wafer uniformity and high step coverage characteristics. Featuring an optimized reactor design with new gas injection module, the system achieves high productivity even in the leading-edge semiconductor device manufacturing, and is used for various applications including formation of contact barriers, capacitor electrodes, word line barriers and metal gates.文件
无文件
类别
Deposition
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
114272
晶圆尺寸：
12"/300mm
年份：
2017
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
TEL / TOKYO ELECTRON
TRIASe+ EX-II TiN
类别
Deposition
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
114272
晶圆尺寸：
12"/300mm
年份：
2017
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
Included Components: -EFEM with Three Load Ports -Main Body Part No: TRT-TMZZ -Chamber Part No: TEX-061 (Qty. 4) -Transformer Box: 3M80-001940-13 (Qty. 2) -Power Distribution Part No: MB-G2AAAA配置
TEL Tokyo Electron Triase+ 300mm CVD ASFD TiN Process System Load Ports: 3 Process: ASFD TiN Software: V5.650R1OEM 型号描述
The Triase+™ EX-II™ TiN (Titanium Nitride) is an advanced 300mm single wafer deposition system for high speed ASFD which enables high-quality thin film formation with excellent within-wafer uniformity and high step coverage characteristics. Featuring an optimized reactor design with new gas injection module, the system achieves high productivity even in the leading-edge semiconductor device manufacturing, and is used for various applications including formation of contact barriers, capacitor electrodes, word line barriers and metal gates.文件
无文件