说明
无说明配置
Polysilicon Etch Etch/Ash/Clean - Plasma Processing Currently Configured for: 200mm Software: 4.8_26 MF: P5000 Mark II Qty 4 - MxP+ Poly ESC: Polymide Gases Used: N2, CF4, AR, O2, CHF3, CO, C4F8 MFCs: 28 DIgital MFC's Unit or Horiba Robot: ROBOT ASSY 8 IN AMAT 5000 Dry Pumps: 1-BA100, 2 DS80/250, 2-IQDP80/WSU151 Chillers: 2 Neslab 150OEM 型号描述
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.文件
无文件
类别
Dry / Plasma Etch
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
125402
晶圆尺寸：
6"/150mm, 8"/200mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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APPLIED MATERIALS (AMAT)
P5000 ETCH
类别
Dry / Plasma Etch
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
125402
晶圆尺寸：
6"/150mm, 8"/200mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明配置
Polysilicon Etch Etch/Ash/Clean - Plasma Processing Currently Configured for: 200mm Software: 4.8_26 MF: P5000 Mark II Qty 4 - MxP+ Poly ESC: Polymide Gases Used: N2, CF4, AR, O2, CHF3, CO, C4F8 MFCs: 28 DIgital MFC's Unit or Horiba Robot: ROBOT ASSY 8 IN AMAT 5000 Dry Pumps: 1-BA100, 2 DS80/250, 2-IQDP80/WSU151 Chillers: 2 Neslab 150OEM 型号描述
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.文件
无文件