说明
2 MARK II Oxide配置
2C/HOEM 型号描述
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.文件
无文件
类别
Dry / Plasma Etch
上次验证： 13 天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
112360
晶圆尺寸：
8"/200mm
年份：
未知
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
类似上架物品
查看全部
APPLIED MATERIALS (AMAT)
P5000 ETCH
类别
Dry / Plasma Etch
上次验证： 13 天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
112360
晶圆尺寸：
8"/200mm
年份：
未知
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
2 MARK II Oxide配置
2C/HOEM 型号描述
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.文件
无文件