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APPLIED MATERIALS (AMAT) P5000 ETCH
    说明
    无说明
    配置
    2 MxP + Chambers
    OEM 型号描述
    The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.
    文件

    无文件

    PREFERRED
     
    SELLER
    类别
    Dry / Plasma Etch

    上次验证: 60 多天前

    Buyer pays 12% premium of final sale price
    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    114275


    晶圆尺寸:

    6"/150mm


    年份:

    1995


    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    类似上架物品
    查看全部
    PREFERRED
     
    SELLER

    APPLIED MATERIALS (AMAT)

    P5000 ETCH

    verified-listing-icon
    已验证
    类别
    Dry / Plasma Etch
    上次验证: 60 多天前
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    Buyer pays 12% premium of final sale price
    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    114275


    晶圆尺寸:

    6"/150mm


    年份:

    1995


    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    说明
    无说明
    配置
    2 MxP + Chambers
    OEM 型号描述
    The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.
    文件

    无文件

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    查看全部