说明
• With Process gases BCb. Clz. SiCl4. CF4, SFo, C4Fs. 02. & Ar. this versatile ICP etcher is designed to etch GaN. Sapphire. metals. ITO, SiC . AlN. ZnO and others • Patented ICP with magnetic confinement (called ISM) provides higher plasma density at lower pressure improves etch rate. uniformity and anisotropy. • The patented star cathode distributes power evenly enhancing uniformity. • System automatically loads (3) 6 inch wafers from the cassette to the carrier. • The carrier is clamped to the cathode which is temperature controlled via a heat exchange. The individual wafers are cooled with backside Helium. • UL and transfer chamber share an Ebara roughing pump. The process chamber uses an Ebara roughing pump and a 1000 Vs turbo.配置
无配置OEM 型号描述
未提供文件
无文件
ULVAC
NE-950
类别
Dry / Plasma Etch
上次验证： 30 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
135818
晶圆尺寸：
未知
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
• With Process gases BCb. Clz. SiCl4. CF4, SFo, C4Fs. 02. & Ar. this versatile ICP etcher is designed to etch GaN. Sapphire. metals. ITO, SiC . AlN. ZnO and others • Patented ICP with magnetic confinement (called ISM) provides higher plasma density at lower pressure improves etch rate. uniformity and anisotropy. • The patented star cathode distributes power evenly enhancing uniformity. • System automatically loads (3) 6 inch wafers from the cassette to the carrier. • The carrier is clamped to the cathode which is temperature controlled via a heat exchange. The individual wafers are cooled with backside Helium. • UL and transfer chamber share an Ebara roughing pump. The process chamber uses an Ebara roughing pump and a 1000 Vs turbo.配置
无配置OEM 型号描述
未提供文件
无文件