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TEL / TOKYO ELECTRON ALPHA-8SE
    说明
    无说明
    配置
    VCF-HTO
    OEM 型号描述
    The Alpha-8SE is a batch thermal processing system that covers multiple applications over a wide temperature range. It was introduced for 200mm wafer processing in the mid-1990s and has undergone continuous improvements to productivity, reliability, and stability. The Alpha-8SE supports 100/150/200mm wafer sizes and up to 150 wafer batch size for semiconductor thin film applications including oxidation & anneal, LPCVD of Si (Poly, a-Si), Si3N4, SiO2, and high-k ALD. It enables performance for today’s most advanced diffusion and deposition processes such as ALD (Atomic Layer Deposition), low-pressure radical oxidation, and low-temperature nitrides.
    文件

    无文件

    类别
    Furnaces / Diffusion

    上次验证: 30 多天前

    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    127182


    晶圆尺寸:

    8"/200mm


    年份:

    2000


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    类似上架物品
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    TEL / TOKYO ELECTRON

    ALPHA-8SE

    verified-listing-icon
    已验证
    类别
    Furnaces / Diffusion
    上次验证: 30 多天前
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    物品主要详细信息

    状况:

    Used


    运行状况:

    未知


    产品编号:

    127182


    晶圆尺寸:

    8"/200mm


    年份:

    2000


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    说明
    无说明
    配置
    VCF-HTO
    OEM 型号描述
    The Alpha-8SE is a batch thermal processing system that covers multiple applications over a wide temperature range. It was introduced for 200mm wafer processing in the mid-1990s and has undergone continuous improvements to productivity, reliability, and stability. The Alpha-8SE supports 100/150/200mm wafer sizes and up to 150 wafer batch size for semiconductor thin film applications including oxidation & anneal, LPCVD of Si (Poly, a-Si), Si3N4, SiO2, and high-k ALD. It enables performance for today’s most advanced diffusion and deposition processes such as ALD (Atomic Layer Deposition), low-pressure radical oxidation, and low-temperature nitrides.
    文件

    无文件

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    查看全部