说明
Nikon KrF lithography machines use 248nm wavelength KrF excimer lasers as exposure light sources, which are suitable for more sophisticated semiconductor processes and are widely used in the manufacture of high-performance semiconductor devices, including microprocessors, dynamic random access memory (DRAM), and complex logic and mixed signal chips. These lithography machines are key equipment for achieving high-precision semiconductor device manufacturing, and play an important role in 4-inch, 6-inch, 8-inch and 12-inch wafer production lines, providing semiconductor manufacturers with flexibility and efficient production capabilities.配置
0.20 0.68 4:1 25*33 LSA:40 FIA:45OEM 型号描述
The system offers a resolution of 150 nm or better with a numerical aperture (NA) of 0.68. It utilizes a KrF excimer laser with a wavelength of 248 nm as the exposure light source. The reduction ratio is 1:4, and the exposure field measures 25 × 33 mm. The alignment accuracy, using the EGA method with |M| + 3σ, is equal to or less than 35 nm.文件
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NIKON
NSR-S204B
类别
Steppers & Scanners
上次验证： 60 多天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
131672
晶圆尺寸：
4"/100mm, 6"/150mm, 8"/200mm, 12"/300mm
年份：
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
Nikon KrF lithography machines use 248nm wavelength KrF excimer lasers as exposure light sources, which are suitable for more sophisticated semiconductor processes and are widely used in the manufacture of high-performance semiconductor devices, including microprocessors, dynamic random access memory (DRAM), and complex logic and mixed signal chips. These lithography machines are key equipment for achieving high-precision semiconductor device manufacturing, and play an important role in 4-inch, 6-inch, 8-inch and 12-inch wafer production lines, providing semiconductor manufacturers with flexibility and efficient production capabilities.配置
0.20 0.68 4:1 25*33 LSA:40 FIA:45OEM 型号描述
The system offers a resolution of 150 nm or better with a numerical aperture (NA) of 0.68. It utilizes a KrF excimer laser with a wavelength of 248 nm as the exposure light source. The reduction ratio is 1:4, and the exposure field measures 25 × 33 mm. The alignment accuracy, using the EGA method with |M| + 3σ, is equal to or less than 35 nm.文件
无文件