Canon Inc. is the world’s largest camera manufacturer with a history spanning over 80 years, during which time they have made some of the most important innovations within both photographic and video technology.

The CANON FPA 2000-i1 is an advanced i-line wafer stepper that can print high-density VLSI devices with high yields. It has a printing wavelength of 365 nm, can handle wafers up to 4" in size, and has a resolution of 0.5 µm. It also features die-by-die and global leveling for wafer leveling.

CANON

 FPA-2000i1

The CANON FPA-2500i2 is a stepper system that can be used with a 6” reticle wafer size. It has a numerical aperture of 0.54 / 0.45 and an image field of 22 mm [(X)17mm x (Y)26mm]. The CANON FPA-2500i2 stepper has a printing wavelength of i-line (365 nm) and a resolution of 0.45 μm. It has an illumination lamp of 1.5 kW super-high-pressure mercury and an illumination uniformity of ≤ 1.2 %. It also has alignment modes of TTL Off-Axis He-Ne TV and TTL Off-Axis Broad Band TV with an alignment light source of He-Ne laser (633 nm) and Halogen lamp. Its alignment accuracy is ≤ 0.1 μm (mean + 3 σ) and its throughput is ≥ 52 wafers / hour (8”, 60 shot).

FPA-2500i2

The Canon MPA-600FA is a high-throughput mirror projection mask aligner delivers stable performance ideal for VLSI chip production, boasting a 1.5um resolution and +/- 6um depth-of-focus across the entire field for 4”, 5”, and 6” wafers. With field-proven auto alignment via laser scanning, target placement in scribe lines, and seamless compatibility for mix-and-match with steppers, it's a top-tier solution for precision alignments.

MPA-600FA

The Canon FPA-3000 i4 is a stepper used in the semiconductor industry. It has a reticle size of 6" square with a thickness of 0.25" and is made of quartz material1. It can handle wafer sizes of 4" through 8" that are SEMI Standard, JEIDA, Notch/Flat. The Canon FPA-3000 i4 has a projection magnification of 1/5 X and a numerical aperture of .45 - .63. The field size is 22x22 17x26 and the exposure light is Kr F (365nm). The estimated throughput of the Canon FPA-3000 i4 is 59 wafers per hour for an 8" wafer with 60 shots and 22 mm field size. For a 6" wafer, it can handle up to 83 wafers per hour with 32 shots and 22 mm field size. The Canon FPA-3000 i4 has an alignment accuracy of less than 0.06 μm (mean + 3 σ). The Canon FPA-3000 i4 has a resolution of 0.35 μm.

FPA-3000i4

KrF photolithography system supports high-volume manufacturing of semiconductor devices. The ES6a scanning stepper utilizes Canon’s Advanced Flexible Illumination System (AFIS) to resolve 90 nanometer features. 

FPA-6000ES6a


FPA-2500i3 i-line stepper, 0.6 NA, 20mm x 20mm field, 44 wafers per hour, targeted at 64Mb DRAM
Numerical Aperture: 0.60 / 0.52 
Image Field: 20 mm [(X)11.14mm x (Y)26mm) 
Printing Wavelength: i-line (365 nm) 
Resolution:0.40μm
Illumination Lamp:	1.5 kW super-high-pressure mercury lamp
Illumination Uniformity:	< ±1.2 %
Current Wafer Size: 6”(4”, 5” and 8” Sizes Available) 
Magnification:	X 1/5 

FPA-2500i3

PLA-501F

MAS 8000

PLA 501

MAS 801HR

The Canon FPA-6000ES5 is a KrF (248nm) scanner built on Canon’s 300mm-ready FPA-6000 single-stage platform. It has an 0.80 numerical aperture and an ultra-low aberration 4:1 reduction lens system, capable of projecting IC features as small as 110nm. It is aimed at chip manufacturers moving processes to 110nm and 90nm nodes. The platform integrates two ultra-technologies, optical lithography and mechanical forces, to achieve an equal mastery of both.

FPA-6000ES5

The FPA-5000ES3 is a KrF scanner with a 0.73 NA, designed for 130nm production. It is built on the Canon FPA-5000 scanning platform and incorporates experience from previous models. The ES3 has significant refinements, particularly in lens performance, and employs unique lens elements using Canon’s “wavefront engineering” method. Lens testing results show values much smaller than the manufacturing target, in some cases by as much as 30-40%.

FPA-5000ES3

FPA-5500iZ	

MPA-500FAB

FPA-5500iZ large-field i-line stepper for lowest CoO on non-critical layers. This high-productivity 365nm step-and-repeat system matches existing KrF/ArF scanner fields (26x33mm) for low-cost rough layer exposure.

FPA-5500iZ+

PLA-501FA

"This step-and-scan system comes with a single stage lithography tool and 0.86 NA. It comes with NA KrF lens with 90nm. The Canon FPA-6000 ES6 can be configured for 200mm or 300mm wafers. Throughput for 300mm is ≥100wph (300mm,122shots) 
 and for 200mm is ≥ 170wph."

FPA-6000ES6

Resolution: ≦ 500 nm
NA (Numerical Aperture): 0.37~0.28 (Variable)
Reduction Ratio1:2
Field Size: 52 mm (max) x 56 mm (max) (Φ70.7 mm inside)
Exposure Wavelength: i-line 365 nm
Reticle Size: 6 inch
Wafer Size: 200 mm (8 inch), 300 mm (12 inch) (Selection)

FPA-5510iX

The CANON FPA 1550 MARK 4 is a Stepper system. The CANON FPA 1550 MARK 4 can be used with 4”- 6” wafer sizes. 

FPA-1550 MARK IV

SURPASS 320

MAS-8220

The FPA-3000iW is a high-throughput stepper from Canon that provides non-critical layer, 0.80µm level exposure at better than 110 wafers per hour. It has a one shot, 50 mm wide field exposure and is designed to decrease capital equipment Cost-of-Ownership. The FPA-3000iW has a small footprint, is easy to operate, and is compatible with Canon’s family of FPA-3000 steppers. It has a large field i-line lens with 0.8µm resolution accuracy and can expose four 22mm FPA-3000i4/i5/EX3 die areas in a single shot.

FPA-3000iW

The FPA-3000EX4 is a Fine Pattern Aligner that uses a 1KHz KrF laser to create quarter micron images on silicon wafers. It has an illumination intensity of 2800 W/m2 and can process 73 wafers per hour. It features a new color touch-panel display, All-Axis Air Bearing FLAT Stage performance, and CQUEST II off-axis illumination capabilities. The EX4 is equipped with a Cymer 1 KHz KrF laser and can expose subquarter micron images while maintaining 35 nm stage stepping accuracy. It also has a variable numerical aperture (NA) and Canon’s ULTIMA lens manufacturing technique to limit distortions. The FPA-3000EX4 offers lithography solutions such as improved resist profiles and depth-of-focus, fast and accurate air bearing FLAT stage performance, low distortion and tight overlay alignment, repeatable alignment accuracy for Chemical Mechanical Polish (CMP) Wafers, and improved chip yields and focus reliability with its edge-shot optimized tilt focusing system (CCD-OPTF II). Its specifications include a 5:1 reduction magnification, variable NA of 0.4 ~ 0.6, resolution of < 0.25 µm, image field size of 22mm ~ 17 X 26 mm, light source wavelength of 248 nm with pulse frequency of 1 kHz and power of 10 W, reticle size of 6", wafer size of max Ø8", off-axis broad-band auto alignment, stage repeatability of < 35 nm, and dimensions of W1900 X D2600 X H2450 mm for the stepper main body.

FPA-3000EX4

The FPA-3000i5 is a Fine Pattern Aligner that can write submicron images on a silicon wafer. It has a 0.35 µm lithography and can process 74 wafers per hour. It has a 0.63 NA and uses the latest off-axis illumination technique (SIA II). The FPA-3000i5 has improved lens performance, better wafer edge chip auto-focusing, and increased illumination intensity. It has a small footprint and a multitasking touch screen operation. It is compatible with Canon’s family of lithography steppers.

FPA-3000i5

PLA-600FA

The Canon FPA-3000EX5 is a high throughput excimer-laser stepper designed for critical layer mass production of 64Mb and 256Mb DRAMs and next-generation microprocessors. It offers a 23% higher throughput than its predecessor, the EX4, with a throughput of more than 90 wafers per hour. It has the industry’s best optical performance and maintains compatibility with existing Canon 5x i-line step-and-repeat tools. The EX5 has a newly designed projection lens with a numerical aperture (NA) of 0.63 and 0.22µm resolution in an exposure area of 22mm x 22mm. It also has an on-the-fly focusing system, an improved advanced global alignment (AGA) scheme, and a high-output Cymer 5000 series excimer laser source. The FPA-3000EX5 stepper shares many of the same technology innovations as other models in Canon’s i-line stepper family, making it an efficient mix-and-match partner with existing critical-layer and rough-layer steppers.

FPA-3000EX5

PLA-600F

** PARTS **

CANON FPA 5000 IZA is a high throughput i-line stepper that delivers significant CoO advantages when exposing layers down to 350nm. This lithography system has overlay accuracy of 16nm through reticle magnification compensation and through improvements in Z and tilt compensation accuracy, stage environment control accuracy, and calibration accuracy. It delivers super productivity at 155wph (200mm wafers) or 93wph (300mm wafers) The CANON FPA 5000 IZA has a 4.5kW high-pressured mercury lamp.

FPA-5000iZa

The Canon MPA-600 FA is a one-to-one projection aligner for 6" wafers. It uses a high intensity Mercury lamp to expose the wafer through a mask plate and a series of mirrors. The wafer scans horizontally through an arc of light at a specified scan speed to expose the light-sensitive positive photoresist that was coated onto the wafer. The Canon MPA-600 FA has a wafer size of 5 or 6 inches and a mask size of 6 or 7 inches square. It uses a projection mirror with a magnification of 1X and an illuminator that is a 2kW super high pressure mercury lamp. The exposure wavelengths used are 365 nm (i-line), 405 nm (h-line), and 436 nm (g-line). The resolution is 2.5 um over the entire 6 inch surface and the depth of focus is more than +/- 6 um at linewidth 1.5 um. The alignment accuracy is 3 sigma, < or = 0.6 um.

MPA 600

SURPASS 300	

The Canon MPA-600Super is a 1:1 mirror projection mask aligner that features improved overlay accuracy for mass production of VLSI devices. It was developed based on the MPA-600FA and MPA-500FAb and achieves better yield, higher throughput, and improved stability. It can handle wafer sizes ranging from 4 to 6 inches and mask sizes from 5 to 7 inches.

MPA-600SUPER

The FPA-5000ES2+ is a high-throughput 248-nanometer scanner for 0.15-micron ICs, introduced by Canon U.S.A. Inc.'s Semiconductor Equipment Division. It uses a 2-kilohertz, krypton-fluoride (KrF) excimer laser to expose 125 eight-inch wafers an hour and is aimed at a growing need for highly productive scanners with both 200- and 300-mm wafer capability. It has been designed to handle both 0.18- and 0.15-micron design rules, and allows field conversion from 200-mm to 300-mm wafer format within a day. It offers a 25% increase in throughput compared with its predecessor, the FPA-5000ES2.

FPA-5000ES2+

MPA-3000W

MAS 8200

APT-5800

PLA-500F

BG3-7842

 BH8-1938-01 BG4-9386 BG8-2694

BG4-8680, BG8-3369, BH8-2022-01

The Canon Stepper FPA-3000 EX3 is a photolithography tool used in semiconductor manufacturing. It has a 6" square quartz reticle and can handle 4” to 8” wafers. The projection optics have a 1/5X magnification and a numerical aperture of .40-.60. The exposure light is KrF (248nm). The illumination system uses a KrF Cymer/ELS4300 light source with an output of 7.2W. The printing performance has a resolution of <0.25μm and depth of focus of >.70μm. The alignment system has reticle rotation accuracy of <±0.01μm on wafer and wafer alignment of <0.055μm mean + 3sigma. The focus/leveling system has focus repeatability of <0.10μm (3sigma). The stage has step accuracy of <0.04μm (3sigma). The throughput is >73 wafers/hour for Φ6", 22mm, 32 shots and >53 wafers/hour for Φ8", 22mm, 60 shots.

FPA-3000EX3

FPA-1550 Mark II is a G-line stepper with a 0.8 micron resolution, and has a numerical aperture (NA) of 0.43 or 0.35, depending on configuration.

FPA-1550 MARK II

MAS 801

The FPA-5510iZ is a high throughput 4X i-line stepper with a CoO advantage for exposing layers down to 280nm. It is compatible with both 200mm and 300mm DUV scanners.

Features include improved overlay and throughput performance through Canon's step-and-repeat know-how, reduced overlay accuracy to 20nm, enhanced focus and tilt compensation accuracy, temperature control, and auto-calibration functions. It also has a 4.5kW high-pressure Mercury Lamp, high transmittance optical system, dynamic aberration correction, fast wafer stage, and optimized wafer handling system for sustained high productivity (160wph for 200mm wafers and 100wph for 300mm wafers).

FPA-5510iZ

MPAsp-H1003T

FPA-6000ES5a

The FPA-3000i5+ is a high productivity mix-and-match partner with Canon excimer series scanners and steppers. Wide-field lens with extra NA variability supports a variety of fine patterning processes. This highly proven and successful veteran of the Canon stepper line-up has been a best-selling product since its release in 1996.

Features:
-Supports varieties of fine pattern demands. High resolution, wide-field lens, extra NA variability, plus reticle options.
-High alignment accuracy for CMP processes. Two off-axis methods in addition to Canon's original technology

FPA-3000i5+

The FPA-3030i5a can be equipped with a handling system that enables the selection of wafer diameters from 50mm (2inch) to 200mm (8inch) to support a variety of different compound semiconductor wafer sizes and materials.

FPA-3030i5a

FPA-3000MR

FPA-1500FA

MPA-8000iW

PPC-1

PLA-500FA

Processing time was reduced by speeding up the exposure process with a new-design Reticle & Wafer Stages, by improving alignment sequences and wafer handling time reduction. The throughput of the FPA-6300ES6a is over *200 wph (wafers per hour) which is 1.6 times higher productivity than previous FPA-6000ES6a model scanners.

*300 mm (12 inch) wafer, 98 shots, with Options applied

FPA-6300ES6a

FPA-3000i5++

MPAsp-H1003H

MPAsp-E813H

MPAsp-E903T

LSF 500

PLA-521FA

FPA-143F

The FPA-5550iZ2 is a high productivity and high overlay accuracy i-line stepper made by Canon1. It offers a low cost Mix-&-Match lithography solution for advanced Logic, Memory and CMOS Image Sensor (CIS) fabrication and also supports growing demand for Internet-of-Things (IoT) device fabrication on both 200 and 300 mm wafers.

FPA-5550iZ2

Alcan (Canon): APS-3800 three-chamber cluster tool. Helicon wave source licensed from Plasma and Materials Technology (MORI source), metal etch, poly etch, resist strip.

APS-3800

FPA-1200NZ2C

FPA-141F

MPAsp-E813T

FPA-3030i5++

MPA-500FA

MPAsp-H803T

FPA-3000GMR 

Wafer Size: 300 mm, 200 mm
Resolution: ≤1.50 µm
Numerical Aperture (NA): 0.10 - 0.18
Reticle Size: 6 in. (0.25 in. thick)
Reduction Ratio: 2:1
Field Size: 52 mm x 34 mm
Overlay Accuracy: ≤300 nm (|m| + 3σ) frontside, ≤300 nm (|m| + 3σ) backside (option)

FPA-5510iV

The FPA-3030iWa supports smaller substrates which are 200 mm or less in diameter.

FPA-3030iWa

FPA-3030EX4

FPA-3030i5+

The FPA-6000AS4 is an ArF scanner that is the industry’s fastest and has the highest NA (0.85). It can project features as small as 85nm and is built on Canon’s new 140-wph, F2-capable FPA-6000 single-stage platform. It provides a cost-optimized solution for high volume 300mm or 200mm exposure processes for leading-edge device manufacturers choosing a mix-and-match strategy. The scanner has a 0.85-NA, 4:1 reduction lens system and is capable of 85-nanometer resolution with an overlay precision of 18nm.

FPA-6000AS4

By changing the projection lens magnification (4:1 → 3.125:1), FPA-6300ESW scanners realize a wider exposure field with the reticle size remaining at 6 inches.

FPA-6300ESW

FPA-1550 MARK IV-W

FPD Lithography Equipment for Generation 6 Plates, Size 1,500 mm x 1,850 mm

MPAsp-E813

MPA-5501B

PLA-300F

MPAsp-H700

MPA-8000

PLA-521F

FPA-3030EX5

MPA-1500 

MPAsp-E813P

FPA-5550iZ

The FPA-1550 Mark III is a G-line system which has a 0.7-micron resolution and a 0.48 numerical aperture.

FPA-1550 MARK III

MAS-1800 microwave downstream asher, single wafer, 40 wafers per hour.

MAS-1800

MPA-7800

The CANON FPA 5000 ES4 scanner is geared for both 200mm and 300mm wafer fabs. This lithography system is suitable for applications at the 100-nm (0.10-micron) and below. The FPA 5000-ES4 has high-throughput rates of 110 wafers per hour (wph) on 300mm and 160wph on 200mm. The s an expansion of Canon's high NA, 248-nm tools for mix-and-match applications

FPA-5000ES4

FPA-1100NR2

FPA-112FA

The performance of previous model FPA-3000EX6 steppers was inherited, and the highest-level of resolution (150 nm), overlay accuracy (25 nm) and productivity (throughput *121 wph) were achieved among KrF excimer laser steppers in the same class.
*200 mm (8 inch) wafer, 60 shots

FPA-3030EX6

Wafer Size: 300 mm (12 inch)
HR / LF / LF2 Options

FPA-5520iV

FPA-3000iWa

FPA-3000i6

FPA-1550 MARK I

Model type: i-Line (365nm) Stepper
Wafer size: 300mm; 200mm
Resolution: ≤0.50µm
Numerical Aperture (NA): 0.28 ~ 0.37
Reticle size: 6in. (0.25in. thick)
Reduction ratio: 2:1
Field size: 50mm x 50mm
Overlay accuracy: ≤ 60nm (M+3)
Throughput: ≥137wph (300mm); ≥160wph ( 200mm)

CANON

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