说明
Details Attached P5000 Spacer2 Mainframe Handler - Robot Options - Nitride Etch Interface - Open Cassette Excluded: CH D Match (1), GFFOX Ozone Units (3), CH d T/B Motor (1), CH A Susceptor TC Amp Board (1), Rear Monitor (1), CH C Lid Switch (1)配置
Software Version E5.01E Process Spacer 2 Dep and Etch Oxide Etch ChOEM 型号描述
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.文件
无文件
类别
Dry / Plasma Etch
上次验证： 7 天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
146092
晶圆尺寸：
8"/200mm
年份：
1995
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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APPLIED MATERIALS (AMAT)
P5000 ETCH
类别
Dry / Plasma Etch
上次验证： 7 天前
物品主要详细信息
状况：
Used
运行状况:
未知
产品编号：
146092
晶圆尺寸：
8"/200mm
年份：
1995
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
Details Attached P5000 Spacer2 Mainframe Handler - Robot Options - Nitride Etch Interface - Open Cassette Excluded: CH D Match (1), GFFOX Ozone Units (3), CH d T/B Motor (1), CH A Susceptor TC Amp Board (1), Rear Monitor (1), CH C Lid Switch (1)配置
Software Version E5.01E Process Spacer 2 Dep and Etch Oxide Etch ChOEM 型号描述
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.文件
无文件