说明
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kv配置
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kvOEM 型号描述
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.文件
无文件
APPLIED MATERIALS (AMAT) / VARIAN
VIISta HCP
已验证
类别
High Current
上次验证： 60 多天前
物品主要详细信息
状况：
Parts Tool
运行状况:
Deinstalled
产品编号：
94077
晶圆尺寸：
未知
年份：
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT) / VARIAN
VIISta HCP
类别
High Current
上次验证： 60 多天前
物品主要详细信息
状况：
Parts Tool
运行状况:
Deinstalled
产品编号：
94077
晶圆尺寸：
未知
年份：
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kv配置
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kvOEM 型号描述
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.文件
无文件