说明
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kv配置
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kvOEM 型号描述
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.文件
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APPLIED MATERIALS (AMAT) / VARIAN
VIISta HCP
已验证
类别
High Current
上次验证： 60 多天前
物品主要详细信息
状况：
Parts Tool
运行状况:
Deinstalled
产品编号：
94077
晶圆尺寸：
未知
年份：
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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APPLIED MATERIALS (AMAT) / VARIAN
VIISta HCP
类别
High Current
上次验证： 60 多天前
物品主要详细信息
状况：
Parts Tool
运行状况:
Deinstalled
产品编号：
94077
晶圆尺寸：
未知
年份：
未知
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kv配置
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kvOEM 型号描述
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.文件
无文件