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APPLIED MATERIALS (AMAT) / VARIAN VIISta HCP
  • APPLIED MATERIALS (AMAT) / VARIAN VIISta HCP
  • APPLIED MATERIALS (AMAT) / VARIAN VIISta HCP
  • APPLIED MATERIALS (AMAT) / VARIAN VIISta HCP
说明
无说明
配置
无配置
OEM 型号描述
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.
文件

无文件

PREFERRED
 
SELLER
类别
High Current

上次验证: 17 天前

Buyer pays 12% premium of final sale price
物品主要详细信息

状况:

Used


运行状况:

Deinstalled


产品编号:

129059


晶圆尺寸:

12"/300mm


年份:

未知


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
PREFERRED
 
SELLER

APPLIED MATERIALS (AMAT) / VARIAN

VIISta HCP

verified-listing-icon
已验证
类别
High Current
上次验证: 17 天前
listing-photo-d910e89cfb5d432b94e561513355a584-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
Buyer pays 12% premium of final sale price
物品主要详细信息

状况:

Used


运行状况:

Deinstalled


产品编号:

129059


晶圆尺寸:

12"/300mm


年份:

未知


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
说明
无说明
配置
无配置
OEM 型号描述
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.
文件

无文件