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APPLIED MATERIALS (AMAT) / VARIAN VIISta HCP
    说明
    无说明
    配置
    无配置
    OEM 型号描述
    The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.
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    PREFERRED
     
    SELLER
    类别
    High Current

    上次验证: 16 天前

    Buyer pays 12% premium of final sale price
    物品主要详细信息

    状况:

    Used


    运行状况:

    Deinstalled


    产品编号:

    129061


    晶圆尺寸:

    12"/300mm


    年份:

    未知


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    PREFERRED
     
    SELLER

    APPLIED MATERIALS (AMAT) / VARIAN

    VIISta HCP

    verified-listing-icon
    已验证
    类别
    High Current
    上次验证: 16 天前
    listing-photo-4c4f9e55bc714b8e909c66bf6733e1d8-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    Buyer pays 12% premium of final sale price
    物品主要详细信息

    状况:

    Used


    运行状况:

    Deinstalled


    产品编号:

    129061


    晶圆尺寸:

    12"/300mm


    年份:

    未知


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    说明
    无说明
    配置
    无配置
    OEM 型号描述
    The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.
    文件

    无文件